Transphorm announces USD 18.5m contract from Office of Naval Research

Transphorm Inc., the provider of the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors, has announced that the US Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year USD 15.9 million option on an existing USD 2.6 million base contract with the company, the company said.

This contract, N68335-19-C-0107, administered by Naval Air Warfare Center Aircraft Division, Lakehurst establishes Transphorm as a US-based dedicated production source and supplier of GaN epiwafers for DoD and Commercial radio frequency (RF)/millimeter wave (mm-wave) and power electronics applications. The award comprises a Base Program for key technology development and an Option Program to establish production scale capability.

The program´s core objective is to commercialize Nitrogen polar (N-polar) GaN, a breakthrough technology beyond the incumbent Ga-polar GaN. N-polar GaN holds significant promise for the continued advancement of GaN-based electronics, in today´s RF electronics and future power conversion systems. The technology was invented under ONR and DARPA sponsorship at the University of California, Santa Barbara (UCSB) by the team of Professor Umesh Mishra, Distinguished Professor at UCSB and Transphorm´s Co-founder, CTO and Chairman.

At 94 GHz, Mishra´s UCSB team has demonstrated mm-wave devices with record power densities and high efficiencies. These devices simplify RF electronic systems by reducing the need for power combining multiple components and devices, while also simplifying cooling systems, ultimately resulting in higher performance at reduced cost.

Transphorm designs and manufactures the highest performance, highest reliability 650 V and 900 V GaN semiconductors for high-voltage power conversion applications. Holding the largest IP portfolio (1000+ issued and pending patents worldwide), Transphorm produces the industry´s first JEDEC and AEC-Q101 qualified GaN FETs. This is due to a vertically integrated business approach, which allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm: moving power electronics beyond Silicon limits.