Samsung Electronics Co., Ltd., the world provider of advanced memory technology, has announced that it has begun mass producing 250-gigabyte (GB) SATA solid state drive (SSD) that integrates the company´s sixth-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND for global PC OEMs, the company said.
By launching a new generation of V-NAND in just 13 months, Samsung has reduced the mass production cycle by four months while securing the industry´s highest performance, power efficiency and manufacturing productivity.
Samsung´s sixth-generation V-NAND features the industry´s fastest data transfer rate, capitalizing on the company´s distinct manufacturing edge that is taking 3D memory to new heights.
Utilizing Samsung´s unique ´channel hole etching´ technology, the new V-NAND adds around 40-percent more cells to the previous 9x-layer single-stack structure. This is achieved by building an electrically conductive mold stack comprised of 136 layers, then vertically piercing cylindrical holes from top to bottom, creating uniform 3D charge trap flash (CTF) cells.
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