Mitsubishi Electric develops ultra-wideband digitally controlled GaN Amplifier

Mitsubishi Electric Corporation (TOKYO: 6503) has announced its development of the world´s first* ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-leading range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems, the company said.

With a power efficiency rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

Key features include:

1) Novel load modulation achieves wideband operation and contributes to large-capacity communication

Mitsubishi Electric´s novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier´s high-efficiency operation, for wideband (1.4–4.8GHz) operation.

Wide-band operation of amplifier supports several frequency bands.

2) Digital control realizes high-efficiency operation and reduces power consumption of mobile base stations